Welcome to ichome.com!

logo
Home

SIHB28N60EF-T1-GE3

SIHB28N60EF-T1-GE3

SIHB28N60EF-T1-GE3

Vishay Siliconix

N-CHANNEL 600V

compliant

SIHB28N60EF-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.50000 $6.5
500 $6.435 $3217.5
1000 $6.37 $6370
1500 $6.305 $9457.5
2000 $6.24 $12480
2500 $6.175 $15437.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2714 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIHA15N50E-GE3
APT5010JVRU2
FDD13AN06A0-F085
FDD13AN06A0-F085
$0 $/piece
SI7117DN-T1-GE3
RV2C001ZPT2L
SI4464DY-T1-E3
SI1308EDL-T1-GE3
TPIC5621LDW
IXTQ42N25P
IXTQ42N25P
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.