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SI4464DY-T1-E3

SI4464DY-T1-E3

SI4464DY-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 1.7A 8SO

compliant

SI4464DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.54481 -
5,000 $0.51923 -
12,500 $0.50096 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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