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SI7117DN-T1-GE3

SI7117DN-T1-GE3

SI7117DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 150V 2.17A PPAK

compliant

SI7117DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.62320 -
6,000 $0.59394 -
15,000 $0.57304 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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