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SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 1.4A SOT323

compliant

SI1308EDL-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14363 -
6,000 $0.13538 -
15,000 $0.12713 -
30,000 $0.11723 -
75,000 $0.11310 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 15 V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 500mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3
Package / Case SC-70, SOT-323
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