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FQT7N10LTF

FQT7N10LTF

FQT7N10LTF

onsemi

MOSFET N-CH 100V 1.7A SOT223-4

compliant

FQT7N10LTF Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.20392 -
8,000 $0.19076 -
12,000 $0.17761 -
28,000 $0.16840 -
14 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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