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SI3127DV-T1-GE3

SI3127DV-T1-GE3

SI3127DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 3.5A/13A 6TSOP

non-compliant

SI3127DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.18772 -
6,000 $0.17628 -
15,000 $0.16484 -
30,000 $0.15683 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 833 pF @ 20 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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