Welcome to ichome.com!

logo
Home

SIHB068N60EF-GE3

SIHB068N60EF-GE3

SIHB068N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 41A D2PAK

non-compliant

SIHB068N60EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.81000 $5.81
500 $5.7519 $2875.95
1000 $5.6938 $5693.8
1500 $5.6357 $8453.55
2000 $5.5776 $11155.2
2500 $5.5195 $13798.75
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 68mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2628 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.