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G110N06T

G110N06T

G110N06T

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

non-compliant

G110N06T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.74000 $1.74
500 $1.7226 $861.3
1000 $1.7052 $1705.2
1500 $1.6878 $2531.7
2000 $1.6704 $3340.8
2500 $1.653 $4132.5
100 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5538 pF @ 25 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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