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IXFN66N85X

IXFN66N85X

IXFN66N85X

IXYS

MOSFET N-CH 850V 65A SOT227B

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IXFN66N85X Pricing & Ordering

Quantity Unit Price Ext. Price
1 $32.80000 $32.8
10 $30.34000 $303.4
100 $25.91200 $2591.2
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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