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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D2Pak) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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