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PHB20N06T,118

PHB20N06T,118

PHB20N06T,118

NXP USA Inc.

MOSFET N-CH 55V 20.3A D2PAK

non-compliant

PHB20N06T,118 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $0.38269 $306.152
1,600 $0.34989 -
2,400 $0.31709 -
5,600 $0.29522 -
20,000 $0.28428 -
5428 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 483 pF @ 25 V
FET Feature -
Power Dissipation (Max) 62W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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