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EPC2016C

EPC2016C

EPC2016C

EPC

GANFET N-CH 100V 18A DIE

non-compliant

EPC2016C Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.05000 -
183555 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
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