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Name | Value |
---|---|
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 59mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id | 4V @ 18mA |
Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3672 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
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