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SI8425DB-T1-E1

SI8425DB-T1-E1

SI8425DB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V 4WLCSP

compliant

SI8425DB-T1-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25425 -
6,000 $0.23775 -
15,000 $0.22950 -
30,000 $0.22500 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-WLCSP (1.6x1.6)
Package / Case 4-UFBGA, WLCSP
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