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SI8425DB-T1-E1

SI8425DB-T1-E1

SI8425DB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V 4WLCSP

compliant

SI8425DB-T1-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25425 -
6,000 $0.23775 -
15,000 $0.22950 -
30,000 $0.22500 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-WLCSP (1.6x1.6)
Package / Case 4-UFBGA, WLCSP
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