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R6535ENZ4C13

R6535ENZ4C13

R6535ENZ4C13

Rohm Semiconductor

650V 35A TO-247, LOW-NOISE POWER

compliant

R6535ENZ4C13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $7.86000 $7.86
500 $7.7814 $3890.7
1000 $7.7028 $7702.8
1500 $7.6242 $11436.3
2000 $7.5456 $15091.2
2500 $7.467 $18667.5
571 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id 4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 379W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247G
Package / Case TO-247-3
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