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SUD35N10-26P-E3

SUD35N10-26P-E3

SUD35N10-26P-E3

Vishay Siliconix

MOSFET N-CH 100V 35A TO252

non-compliant

SUD35N10-26P-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.04247 -
6,000 $1.00386 -
10,000 $0.98280 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
FET Feature -
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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