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IPD110N12N3GATMA1

IPD110N12N3GATMA1

IPD110N12N3GATMA1

MOSFET N-CH 120V 75A TO252-3

non-compliant

IPD110N12N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.93748 -
5,000 $0.90276 -
6311 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 60 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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