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IXTQ110N10P

IXTQ110N10P

IXTQ110N10P

IXYS

MOSFET N-CH 100V 110A TO3P

non-compliant

IXTQ110N10P Pricing & Ordering

Quantity Unit Price Ext. Price
30 $4.41000 $132.3
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 25 V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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