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SISS94DN-T1-GE3

SISS94DN-T1-GE3

SISS94DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 5.4A/19.5A PPAK

non-compliant

SISS94DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.96000 $0.96
500 $0.9504 $475.2
1000 $0.9408 $940.8
1500 $0.9312 $1396.8
2000 $0.9216 $1843.2
2500 $0.912 $2280
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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