Welcome to ichome.com!

logo
Home

SISS94DN-T1-GE3

SISS94DN-T1-GE3

SISS94DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 5.4A/19.5A PPAK

compliant

SISS94DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.96000 $0.96
500 $0.9504 $475.2
1000 $0.9408 $940.8
1500 $0.9312 $1396.8
2000 $0.9216 $1843.2
2500 $0.912 $2280
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

BUK9609-55A,118
BUK9609-55A,118
$0 $/piece
IRFBE20PBF
IRFBE20PBF
$0 $/piece
SI3433CDV-T1-GE3
FDD8876
FDD8876
$0 $/piece
SI4842BDY-T1-E3
IXFT86N30T
IXFT86N30T
$0 $/piece
SI8812DB-T2-E1
DI035P04PT-AQ
DMN53D0LW-7

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.