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SI4842BDY-T1-E3

SI4842BDY-T1-E3

SI4842BDY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 28A 8SO

non-compliant

SI4842BDY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.26800 -
5,000 $1.22400 -
289 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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