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SI8812DB-T2-E1

SI8812DB-T2-E1

SI8812DB-T2-E1

Vishay Siliconix

MOSFET N-CH 20V 4MICROFOOT

non-compliant

SI8812DB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17057 -
6,000 $0.16018 -
15,000 $0.14978 -
30,000 $0.14251 -
75,000 $0.14175 -
1800 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-UFBGA
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