Welcome to ichome.com!

logo
Home

SIR696DP-T1-GE3

SIR696DP-T1-GE3

SIR696DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 125V 60A PPAK SO-8

non-compliant

SIR696DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.64206 -
6,000 $0.61192 -
15,000 $0.59038 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 125 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1410 pF @ 75 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

NTMFS024N06CT1G
NTMFS024N06CT1G
$0 $/piece
NTMFSC0D9N04CL
NTMFSC0D9N04CL
$0 $/piece
MTDF1C02HDR2
MTDF1C02HDR2
$0 $/piece
FCMT099N65S3
FCMT099N65S3
$0 $/piece
IRFP4568PBF
STH275N8F7-6AG
SI3429EDV-T1-GE3
STL8N80K5
STL8N80K5
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.