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SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 8A/8A 6TSOP

non-compliant

SI3429EDV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14746 -
6,000 $0.13899 -
15,000 $0.13052 -
30,000 $0.12035 -
75,000 $0.11612 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 4085 pF @ 50 V
FET Feature -
Power Dissipation (Max) 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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