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STH275N8F7-6AG

STH275N8F7-6AG

STH275N8F7-6AG

STMicroelectronics

MOSFET N-CH 80V 180A H2PAK-6

compliant

STH275N8F7-6AG Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $2.94100 -
2,000 $2.81010 -
2000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 50 V
FET Feature -
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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