Welcome to ichome.com!

logo
Home

SIR626LDP-T1-RE3

SIR626LDP-T1-RE3

SIR626LDP-T1-RE3

Vishay Siliconix

MOSFET N-CH 60V 45.6A/186A PPAK

compliant

SIR626LDP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.91930 -
6,000 $0.88740 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

PSMN022-30BL,118
IXTA08N100D2
IXTA08N100D2
$0 $/piece
DMN3067LW-13
FDB86366-F085
FDB86366-F085
$0 $/piece
FQPF6N50
DMT6012LFV-7
IPF13N03LA G
FQP17N08

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.