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IXTA08N100D2

IXTA08N100D2

IXTA08N100D2

IXYS

MOSFET N-CH 1000V 800MA TO263

compliant

IXTA08N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.86000 $1.86
50 $1.50000 $75
100 $1.35000 $135
500 $1.05000 $525
1,000 $0.87000 -
2,500 $0.84000 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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