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IRFH5020TRPBF

IRFH5020TRPBF

IRFH5020TRPBF

MOSFET N-CH 200V 5.1A 8PQFN

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IRFH5020TRPBF Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $1.06363 -
8,000 $1.02870 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 100 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
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