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SIHP30N60E-GE3

SIHP30N60E-GE3

SIHP30N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 29A TO220AB

non-compliant

SIHP30N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.62000 $6.62
10 $5.91300 $59.13
100 $4.84830 $484.83
500 $3.92590 $1962.95
1,000 $3.31100 -
3,000 $3.14545 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package -
Package / Case TO-220-3
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