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PJW5N10-AU_R2_000A1

PJW5N10-AU_R2_000A1

PJW5N10-AU_R2_000A1

100V N-CHANNEL ENHANCEMENT MODE

non-compliant

PJW5N10-AU_R2_000A1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.59000 $0.59
500 $0.5841 $292.05
1000 $0.5782 $578.2
1500 $0.5723 $858.45
2000 $0.5664 $1132.8
2500 $0.5605 $1401.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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