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SIHD3N50D-E3

SIHD3N50D-E3

SIHD3N50D-E3

Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

non-compliant

SIHD3N50D-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.06000 $1.06
10 $0.93800 $9.38
100 $0.74710 $74.71
500 $0.58540 $292.7
1,000 $0.46778 -
3,000 $0.43837 -
6,000 $0.41779 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SIHA25N50E-GE3

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