Welcome to ichome.com!

logo
Home

SIHP100N60E-GE3

SIHP100N60E-GE3

SIHP100N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 30A TO220AB

non-compliant

SIHP100N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.70000 $5.7
10 $5.10700 $51.07
100 $4.22020 $422.02
500 $3.45140 $1725.7
1,000 $2.93888 -
3,000 $2.80090 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1851 pF @ 100 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.