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SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 9.4A/35.3A PPAK

non-compliant

SIS606BDN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.70520 -
6,000 $0.67209 -
15,000 $0.64844 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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