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FDN363N

FDN363N

FDN363N

N-CHANNEL POWER MOSFET

non-compliant

FDN363N Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.17000 $0.17
500 $0.1683 $84.15
1000 $0.1666 $166.6
1500 $0.1649 $247.35
2000 $0.1632 $326.4
2500 $0.1615 $403.75
58788 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-3
Package / Case TO-236-3, SC-59, SOT-23-3
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