Welcome to ichome.com!

logo
Home

SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A PPAK 8 X 8

compliant

SIHH180N60E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $2.63779 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 100 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DMP2225LQ-7
STH3N150-2
STW10N105K5
RCD041N25TL
DN3545N8-G
NVMFS5H600NLT1G
NVMFS5H600NLT1G
$0 $/piece
SI2369BDS-T1-GE3
BUK762R6-60E,118
IRLU8743PBF

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.