Welcome to ichome.com!

logo
Home

SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A PPAK 8 X 8

compliant

SIHH180N60E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $2.63779 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 100 V
FET Feature -
Power Dissipation (Max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DMP2225LQ-7
STH3N150-2
STW10N105K5
RCD041N25TL
DN3545N8-G
NVMFS5H600NLT1G
NVMFS5H600NLT1G
$0 $/piece
SI2369BDS-T1-GE3
BUK762R6-60E,118
IRLU8743PBF

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.