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SI2369BDS-T1-GE3

SI2369BDS-T1-GE3

SI2369BDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5.6A/7.5A SOT23

compliant

SI2369BDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.56000 $0.56
500 $0.5544 $277.2
1000 $0.5488 $548.8
1500 $0.5432 $814.8
2000 $0.5376 $1075.2
2500 $0.532 $1330
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V
Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 745 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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