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STH3N150-2

STH3N150-2

STH3N150-2

STMicroelectronics

MOSFET N-CH 1500V 2.5A H2PAK

compliant

STH3N150-2 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $2.78357 -
2,000 $2.65968 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 25 V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant
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