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SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) 175C MOSFE

non-compliant

SIDR510EP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.20000 $3.2
500 $3.168 $1584
1000 $3.136 $3136
1500 $3.104 $4656
2000 $3.072 $6144
2500 $3.04 $7600
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 148A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4980 pF @ 50 V
FET Feature -
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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