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SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) 175C MOSFE

compliant

SIDR510EP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.20000 $3.2
500 $3.168 $1584
1000 $3.136 $3136
1500 $3.104 $4656
2000 $3.072 $6144
2500 $3.04 $7600
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 148A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4980 pF @ 50 V
FET Feature -
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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