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BSH201,215

BSH201,215

BSH201,215

Nexperia USA Inc.

MOSFET P-CH 60V 300MA TO236AB

non-compliant

BSH201,215 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14971 -
6,000 $0.14174 -
15,000 $0.13376 -
30,000 $0.12419 -
75,000 $0.12021 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id 1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 48 V
FET Feature -
Power Dissipation (Max) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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