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IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

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IAUC100N04S6N028ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.12000 $1.12
500 $1.1088 $554.4
1000 $1.0976 $1097.6
1500 $1.0864 $1629.6
2000 $1.0752 $2150.4
2500 $1.064 $2660
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 2.86mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 24µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 25 V
FET Feature -
Power Dissipation (Max) 62W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
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