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SI8851EDB-T2-E1

SI8851EDB-T2-E1

SI8851EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 20V PWR MICRO FOOT

non-compliant

SI8851EDB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.26781 -
6,000 $0.25043 -
15,000 $0.24174 -
30,000 $0.23700 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 660mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Power Micro Foot® (2.4x2)
Package / Case 30-XFBGA
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