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IXTT80N20L

IXTT80N20L

IXTT80N20L

IXYS

MOSFET N-CH 200V 80A TO268

compliant

IXTT80N20L Pricing & Ordering

Quantity Unit Price Ext. Price
30 $12.52467 $375.7401
40 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6160 pF @ 25 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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