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SI3477DV-T1-GE3

SI3477DV-T1-GE3

SI3477DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 8A 6TSOP

non-compliant

SI3477DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.32205 -
6,000 $0.30115 -
15,000 $0.29070 -
30,000 $0.28500 -
11256 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 17.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 6 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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