Welcome to ichome.com!

logo
Home

SI8457DB-T1-E1

SI8457DB-T1-E1

SI8457DB-T1-E1

Vishay Siliconix

MOSFET P-CH 12V 4MICRO FOOT

compliant

SI8457DB-T1-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23646 -
6,000 $0.22205 -
15,000 $0.20764 -
30,000 $0.19755 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 6 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.