Welcome to ichome.com!

logo
Home

IPB039N10N3GATMA1

IPB039N10N3GATMA1

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

compliant

IPB039N10N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.43550 -
2,000 $1.33650 -
5,000 $1.28700 -
12496 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SI3493BDV-T1-BE3
C2M0280120D
C2M0280120D
$0 $/piece
RSQ020N03TR
STL92N10F7AG
IXTX90P20P
IXTX90P20P
$0 $/piece
STP8N90K5
STP8N90K5
$0 $/piece
SI8806DB-T2-E1
SI7489DP-T1-GE3

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.