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RSQ020N03TR

RSQ020N03TR

RSQ020N03TR

Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

non-compliant

RSQ020N03TR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.22785 -
2542 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 134mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 10 V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
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