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SI7956DP-T1-GE3

SI7956DP-T1-GE3

SI7956DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

compliant

SI7956DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.78182 -
6,000 $1.71912 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
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