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FQS4900TF

FQS4900TF

FQS4900TF

POWER FIELD-EFFECT TRANSISTOR, 1

non-compliant

FQS4900TF Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.65803 -
36948 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 60V, 300V
Current - Continuous Drain (Id) @ 25°C 1.3A, 300mA
Rds On (Max) @ Id, Vgs 550mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id 1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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