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IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

MOSFET 2N-CH 8TDSON

compliant

IPG20N10S4L35ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.47226 -
10,000 $0.45450 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
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