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SI4190ADY-T1-GE3

SI4190ADY-T1-GE3

SI4190ADY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 18.4A 8SO

non-compliant

SI4190ADY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.95005 -
5,000 $0.91708 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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