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IRF6641TRPBF

IRF6641TRPBF

IRF6641TRPBF

MOSFET N-CH 200V 4.6A DIRECTFET

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IRF6641TRPBF Pricing & Ordering

Quantity Unit Price Ext. Price
4,800 $1.54880 -
4800 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MZ
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